1. product profile 1.1 general description planar pin diode in a sod323 (sc-76) small smd plastic package. 1.2 features and benefits ? high voltage current controlled rf resistor for attenuators ? low diode capacitance ? very low series inductance 1.3 applications ? rf attenuators ? (sat) tv ? car radio 2. pinning information 3. ordering information 4. marking bap70-03 silicon pin diode rev. 6 ? 7 march 2014 product data sheet table 1. discrete pinning pin description simplified outline graphic symbol 1 cathode 2 anode v \ p table 2. ordering information type number package name description version bap70-03 - plastic surface-m ounted package; 2 leads sod323 table 3. marking type number marking code bap70-03 a9
bap70-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 6 ? 7 march 2014 2 of 8 nxp semiconductors bap70-03 silicon pin diode 5. limiting values 6. thermal characteristics 7. characteristics table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v r reverse voltage continuous voltage - 50 v i f forward current continuous current - 100 ma p tot total power dissipation t sp =90 ?c - 500 mw t stg storage temperature ? 65 +150 ?c t j junction temperature ? 65 +150 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 120 k/w table 6. characteristics t amb = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v f forward voltage i f =50ma - 0.9 1.1 v i r reverse current v r = 50 v - - 100 na c d diode capacitance see figure 1 ; f = 1 mhz; v r =0v - 570 - ff v r =1v - 400 - ff v r =5v - 270 - ff v r = 20 v - 200 250 ff r d diode forward resistance see figure 2 ; f = 100 mhz; i f = 0.5 ma - 77 100 ? i f =1ma - 40 50 ? i f =10ma - 5.4 7 ? i f =100ma - 1.4 1.9 ? ? l charge carrier life time when switched from i f =10ma to i r =6ma; r l = 100 ? ; measured at i r =3ma -1.25- ? s l s series inductance i f = 100 ma; f = 100 mhz - 1.5 - nh
bap70-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 6 ? 7 march 2014 3 of 8 nxp semiconductors bap70-03 silicon pin diode f=1mhz; t j =25 ? c. f = 100 mhz; t j =25 ? c. fig 1. diode capacitance as a function of reverse voltage; typical values fig 2. diode forward resistance as a function of forward current; typical values & g i ) 9 5 9 p f h p f h u ' , ) p $
bap70-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 6 ? 7 march 2014 4 of 8 nxp semiconductors bap70-03 silicon pin diode 8. package outline fig 3. package outline sod323 5 ( ) ( 5 ( 1 & |